Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

• ; molecular dynamics; silicon; simulations; water; Introduction Focused ion beams (FIB) play an increasingly important role in materials research areas such as nanoanalysis (e.g., secondary ion mass spectrometry (SIMS) [1][2][3] and sample preparation for transmission electron microscopy (TEM) [4], atom

Bio-imaging with the helium-ion microscope: A review

• Matthias Schmidt,
• James M. Byrne and
• Ilari J. Maasilta

Beilstein J. Nanotechnol. 2021, 12, 1–23, doi:10.3762/bjnano.12.1

• secondary ion mass spectrometry (SIMS) or ionoluminescence with the HIM, also offer the possibility for new and exciting research on biological materials. In this review, we present a comprehensive overview of almost all currently published literature which has demonstrated the application of HIM for

• current are changed. Figure 3 illustrates how the variation of the dwell time of the ion beam on a pixel influences the brightness of the image if the flooding parameters are kept constant. Similar results can be obtained when the flood time is varied at a constant dwell time. Secondary ion mass

• spectrometry (SIMS) A major disadvantage of using standard HIM rather than SEM is the lack of analytical detectors for elemental quantification, such as EDX. This is because 30 keV helium ions cannot transfer enough energy to the bound inner-shell electrons of the sample to excite them out of the core states

Scanning transmission imaging in the helium ion microscope using a microchannel plate with a delay line detector

• Eduardo Serralta,
• Nico Klingner,
• Olivier De Castro,
• Michael Mousley,
• Santhana Eswara,
• Serge Duarte Pinto,
• Tom Wirtz and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2020, 11, 1854–1864, doi:10.3762/bjnano.11.167

• studied by detecting the light emitted from the sample during ion bombardment [8][9][10]. Moreover, compositional analyses using secondary ion mass spectrometry (SIMS) can be performed in the HIM with a lateral resolution of the order of 10 nm [11][12][13][14]. Transmission-mode imaging can further

Helium ion microscope – secondary ion mass spectrometry for geological materials

• Matthew R. Ball,
• Richard J. M. Taylor,
• Joshua F. Einsle,
• Fouzia Khanom,
• Christelle Guillermier and
• Richard J. Harrison

Beilstein J. Nanotechnol. 2020, 11, 1504–1515, doi:10.3762/bjnano.11.133

• well as practicalities for geological sample analyses of Li alongside a discussion of potential geological use cases of the HIM–SIMS instrument. Keywords: geoscience; helium ion microscopy (HIM); lithium; secondary ion mass spectrometry (SIMS); Introduction The helium ion microscope (HIM) is a

• several suggestions for the possibility of microanalysis on the HIM, the most common of these being Rutherford backscattered ion imaging (RBI) and secondary ion mass spectrometry (SIMS) [7][8][9]. However, the variation of RBI intensity with changing surface chemistry, specifically the atomic number, Z

• mass spectrometry (SIMS) attachment, the capabilities of the instrument have expanded to microanalysis of isotopes from Li up to hundreds of atomic mass units, effectively opening up the analysis of all natural and geological systems. However, the instrument has thus far been underutilised by the

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• the Si substrate. MLD-doped 66 nm SOI was further examined using secondary ion mass spectrometry (SIMS) to attain a more detailed view of total dopant distribution in the substrate, which is complementary to previous measurements of active carrier concentrations through ECV. Data shown in Figure 7

Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

• Jonathan Op de Beeck,
• Nouha Labyedh,
• Alfonso Sepúlveda,
• Valentina Spampinato,
• Alexis Franquet,
• Thierry Conard,
• Philippe M. Vereecken,
• Wilfried Vandervorst and
• Umberto Celano

Beilstein J. Nanotechnol. 2018, 9, 1623–1628, doi:10.3762/bjnano.9.154

• established nanoscale analysis techniques namely conductive atomic force microscopy (C-AFM) and secondary ion mass spectrometry (SIMS). We present a platform to study Li-ion composites with nanometer resolution that allows one to sense a multitude of key characteristics including structural, electrical and

• indicated. Keywords: all-solid-state microbatteries (ASB); conductive atomic force microscopy (C-AFM); Li-ion kinetics; secondary ion mass spectrometry (SIMS); 3D thin-film batteries; Findings Conventional Li-ion battery technology is undergoing continuous improvements in order to fulfil the increasing

• conductive atomic force microscopy (C-AFM) and secondary ion mass spectrometry (SIMS). As model systems, we focus on LiMn2O4 (LMO) as cathode material [7] deposited by wet electrodeposition (thickness 260 nm) and RF-sputtered (thickness 100 nm) and compare their properties on a local (sub-100 nm) scale. In

Ta₂N₃ nanocrystals grown in Al₂O₃ thin layers

• Krešimir Salamon,
• Maja Buljan,
• Iva Šarić,
• Mladen Petravić and
• Sigrid Bernstorff

Beilstein J. Nanotechnol. 2017, 8, 2162–2170, doi:10.3762/bjnano.8.215

• magnetron deposition at room temperature and characterized using grazing incidence small-angle X-ray scattering (GISAXS), X-ray reflectivity (XRR), grazing incidence X-ray diffraction (GIXRD), secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). We found amorphous tantalum

• nitride NPs with the processing parameters of the films. For this purpose we used complimentary and well-established characterization techniques such as X-ray reflectivity (XRR), grazing incidence small-angle X-ray scattering (GISAXS), grazing incidence X-ray diffraction (GIXRD), secondary ion mass

• spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). Experimental The films were grown as periodic multilayers by using the magnetron sputter deposition system KJLC CMS-18. In order to obtain tantalum nitride, the depositions were carried out in a reactive atmosphere containing 20% N2 and 80% Ar

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for

• accuracy in etch depth control with RAS, which until now had been estimated only in our earlier publications [8][9], is demonstrated. Different etch depths have been monitored during etching of layered samples and the results are compared to secondary ion mass spectrometry (SIMS) measurements of the

• investigated by secondary ion mass spectrometry (SIMS), using a TOF–SIMS IV instrument from ION-TOF GmbH, Muenster, Germany. Applying the so-called dual beam depth profiling technique with 2 keV Cs+ as sputter ions and 20 keV Bi3+ as analysis ions, the thickness of the sputtered Al0.5Ga0.5As (i.e., Al

Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

• Patrick Philipp,
• Lukasz Rzeznik and
• Tom Wirtz

Beilstein J. Nanotechnol. 2016, 7, 1749–1760, doi:10.3762/bjnano.7.168

• specifically secondary ion mass spectrometry (SIMS), analysis of organic samples by sputtering is also one important field of applications and the kind of damage mentioned for previous applications remains the same. However, for depth profiling applications of polymers [19] and biological samples [20

• Patrick Philipp Lukasz Rzeznik Tom Wirtz Advanced Instrumentation for Ion Nano-Analytics (AINA), MRT Department, Luxembourg Institute of Science and Technology (LIST), 41 rue du Brill, L-4422 Belvaux, Luxembourg 10.3762/bjnano.7.168 Abstract The analysis of polymers by secondary ion mass

• spectrometry (SIMS) has been a topic of interest for many years. In recent years, the primary ion species evolved from heavy monatomic ions to cluster and massive cluster primary ions in order to preserve a maximum of organic information. The progress in less-damaging sputtering goes along with a loss in

Nanoanalytics for materials science

• Thilo Glatzel and
• Tom Wirtz

Beilstein J. Nanotechnol. 2016, 7, 1674–1675, doi:10.3762/bjnano.7.159

• sensors for both nanoindentation and depth sensing is presented by Cinar and co-workers [2]. Furthermore, Fleming et al. present an in situ combination of atomic force microscopy (AFM) and secondary ion mass spectrometry (SIMS) [3]. By doing so, they obtain high-resolution 3D elemental/chemical maps. This

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

• Lukasz Rzeznik,
• Yves Fleming,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2016, 7, 1113–1128, doi:10.3762/bjnano.7.104

• Lukasz Rzeznik Yves Fleming Tom Wirtz Patrick Philipp Advanced Instrumentation for Ion Nano-Analytics (AINA), MRT Department, Luxembourg Institute of Science and Technology (LIST), 41 rue du Brill, L-4422 Belvaux, Luxembourg 10.3762/bjnano.7.104 Abstract Secondary ion mass spectrometry (SIMS) on

• secondary ion mass spectrometry (SIMS). Combined with a high-resolution mass spectrometer, mass interferences can be avoided and isotopes and small cluster ions identified unambiguously. These properties have been used since the early days of SIMS for imaging applications [1]. On the Cameca NanoSIMS, which

Heterometal nanoparticles from Ru-based molecular clusters covalently anchored onto functionalized carbon nanotubes and nanofibers

• Deborah Vidick,
• Xiaoxing Ke,
• Michel Devillers,
• Claude Poleunis,
• Arnaud Delcorte,
• Pietro Moggi,
• Gustaaf Van Tendeloo and
• Sophie Hermans

Beilstein J. Nanotechnol. 2015, 6, 1287–1297, doi:10.3762/bjnano.6.133

• proof was obtained by secondary ion mass spectrometry (SIMS) by comparison with non-functionalized carbon samples, but also by reacting model compounds in solution and crystallizing the products to solve their crystal structure, confirming the hypothesis [52]. Indeed, clusters 1–9 are anchored on the

• rather than chelating phosphine ligands. It is also known that Au atoms in clusters actually behave more as ligands than as part of the cluster core [53]. SIMS characterization of anchored species Cluster 4 anchored on CNF–PPh2, MWNTox and MWNT–PPh2 was characterized by secondary ion mass spectrometry

• (SIMS) after anchoring. It should be pointed out that the SIMS analysis was difficult because of undesired electrostatic interactions in the very narrow acceleration section (a few millimeters) between the grounded sample and the extraction lens of the spectrometer at 2 kV. These point effects can be

High sensitivity and high resolution element 3D analysis by a combined SIMS–SPM instrument

• Yves Fleming and
• Tom Wirtz

Beilstein J. Nanotechnol. 2015, 6, 1091–1099, doi:10.3762/bjnano.6.110

• of the TiCN cermet. Keywords: alloy; atomic force microscopy (AFM); correlative microscopy; differential sputtering; in situ; multimodal imaging; nano-cluster; polymer blend; secondary ion mass spectrometry (SIMS); scanning probe microscopy (SPM); SIMS artefacts; sputter-induced effects; sputter

• has increased during the last decade [1]. In particular, nano-analytical techniques and instruments providing both excellent spatial resolution and high-sensitivity chemical information are of utmost importance for investigations at the nanoscale. Secondary ion mass spectrometry (SIMS) is a method of

• Yves Fleming Tom Wirtz Advanced Instrumentation for Ion Nano-Analytics (AINA), MRT Department, Luxembourg Institute of Science and Technology (LIST), 41 rue du Brill, L-4422 Belvaux, Luxembourg 10.3762/bjnano.6.110 Abstract Using the recently developed SIMS–SPM prototype, secondary ion mass

Diamond nanophotonics

• Katja Beha,
• Helmut Fedder,
• Marco Wolfer,
• Merle C. Becker,
• Petr Siyushev,
• Mohammad Jamali,
• Anton Batalov,
• Christopher Hinz,
• Jakob Hees,
• Lutz Kirste,
• Harald Obloh,
• Etienne Gheeraert,
• Boris Naydenov,
• Ingmar Jakobi,
• Florian Dolde,
• Sébastien Pezzagna,
• Daniel Twittchen,
• Matthew Markham,
• Daniel Dregely,
• Harald Giessen,
• Jan Meijer,
• Fedor Jelezko,
• Christoph E. Nebel,
• Rudolf Bratschitsch,
• Alfred Leitenstorfer and
• Jörg Wrachtrup

Beilstein J. Nanotechnol. 2012, 3, 895–908, doi:10.3762/bjnano.3.100

• decrease of the nickel signal after lowering the argon flux at both 40 min and 50 min indicates the absence of unwanted hysteresis effects. 5.3 Verification of nickel incorporation The incorporation of nickel into the as-grown diamond layers was verified by secondary ion mass spectrometry (SIMS). An